jiangsu changji ang electronics technology co., ltd sot -363 plastic-encapsulate mosfets CJ7252KDW n chan nel + p channel power mosfet description this n chan nel + p channel mosfet has been designed using adva nced power trench proc ess to optimize the r ds(on) . fea ture z high-side switching z low threshold z fast switching s peed application z drivers:relays, solenoids, memories z battery operated systems z power supply converter circuits z load/power switching cell phones, pagers marking: 75 maximum ra tings (t a =25 unless other wise noted) symbol para meter value unit n-channel mosfet v ds drain-s ourc e v o lt ag e 60 v v gs gate-source v oltage 20 v i d drain current -continuous 0.34 a i dm drain c urrent - pulsed(note1) 1.36 a p- channel m osfet v ds drain-s ource voltage -50 v v gs gate-source v oltage 20 v i d drain current -continuous -0.18 a i dm drain current ? pulsed (note1) -0.7 a po wer dissipation, temp erature and thermal resistance p d po wer dissipation 0.15 w so t -363 1 6 2 s1 d1 g1 3 4 5 d2 s2 g2 www.cj-elec.com 1 a- 5 , mar ,201 6 r ja t hermal resistance from junction to ambient (note2) 833 / w t j junctio n temperature 150 t st g s torage temperature -55~+150 t l lea d temperature 260 v (br ) dss r ds(o n) max i d 6 0 v ? 5 @ 10 v ? 0. 34 a 5.3 @ 4 .5 v ? - 5 0 v ? 8 @ - 10 v ? - 0 . 18 a 1 0 @ - 5 v ? equivalent circuit
parameter symbol test conditions min typ max unit n- channel mosfet drain-s ource breakdown voltage v (b r)dss v gs =0 v, i d = 250a 60 v z ero gate voltage drain current i d ss v ds = 48v,v gs = 0v 1 a v gs = 20v, v ds = 0 v 10 a v gs = 10v, v ds = 0 v 20 0 na gate-bod y leakage current i gss v gs =5v, v ds = 0v 10 0 na gate threshol d voltage (note 3) v gs( th) v ds =v gs , i d =1 ma 1 1.3 2.5 v v gs =4.5v, i d =0. 2a 1.1 5.3 ? drain-s ource on-resistance (note 3) r ds (on) v gs = 10v, i d =0. 5a 0.9 5 ? diod e forward voltage v sd i s =0.3a, v gs = 0v 1.5 v dyn amic parameters (note 4) input cap acitance c iss 40 pf output cap acitance c oss 30 pf revers e transfer capacitance c rss v ds = 10v,v gs =0 v,f =1mhz 10 pf switching pa rameters (note 4) t urn-on delay time t d( on) 10 ns t urn-off delay time t d( off) v gs = 10v,v dd = 50v, r l = 250 ?,r gen =5 0 ? , 15 ns revers e recov e r y time t rr 30 ns recov e red ch a r ge q r i s = 300ma; d is /d t = - 100a/s;v gs =0 v ; v r = 25v 30 nc p- channel m o sfet drain-s ource breakdown voltage v (b r)dss v gs = 0v, i d = -250a -50 v v ds = -50v,v gs = 0v -15 a z ero gate voltage drain current i d ss v ds = -25v,v gs = 0v -0.1 a gate-bod y leakage current i gss v gs = 20v, v ds = 0 v 10 na gate threshol d voltage (note 3) v gs( th) v ds =v gs , i d = -250a -0.9 -1.62 -2 v www.cj-elec.com 2 a-5,mar,2016 mosfet electrical characteristics a t =25 unless otherwise specified v gs =-5v, i d = -0.1a 5.5 10 ? drain-s ource on-resistance (note 3) r ds (on) v gs = -10v, i d =-0.1a 4.1 8 ? f o r w a r d transc ond uctanc e (n ote 3) g fs v ds = -25v, i d =-0.1a 0.05 s dyn a m i c ch a r a c teristics (note 4) input cap acitance c iss 30 pf output capac itance c oss 10 pf revers e transfer capacitance c rss v ds =-5v,v gs = 0v,f =1mhz 5 pf switching c haracteristics (note 4) t urn-on delay time t d( on) 2.5 ns t urn-on rise time t r 1 ns t urn-off delay time t d( off) 16 ns t urn-off fall time t f v dd = -15v, r l =5 0 ? , i d =-2 .5 a 8 ns source ? dr a i n diode c h a r a c te ristics(note 4) conti nuous current i s -0.18 a pulse d current i sm -0.7 a diod e for w ar d voltag e (note 3 ) v ds i s = - 0.13a, v gs = 0 v -2.2 v note: 1 surface mounted on fr-4 board using minimum p ad size, 1oz copper 2 repetitive rating: pulse width limited by maximum junction temperature. 3 pulse test: pulse width 300 s, duty cycle 2% 4 these parameters have no way to verify.
0.0 0 .2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1e-3 0.01 0.1 1 2 012345 0.0 0.4 0.8 1.2 0 300 600 900 1200 1500 0 1 2 3 4 5 024 68 1 0 0 2 4 6 8 10 0246 8 0.0 0.4 0.8 1.2 25 50 75 100 125 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 t a =25 puls ed puls ed t a =100 v sd i s ? ? t a =25 source current i s (a) source to drain voltage v sd (v) v gs =5v,6v,7v,10v v gs =4v v gs =3v o u tput characteristics drain current i d (a) drain to source voltage v ds (v) t a =25 pulsed v gs =10v v gs =4.5v t a =25 puls ed o n -resistance r ds ( on) ( ? ) drain current i d (m a) i d ?? r ds(o n) o n -resistance r ds( on) ( ? ) gate to source voltage v gs (v) v gs ?? r ds(o n) i d =500m a v ds =3v pulsed drain current i d (a) gate to source voltage v gs (v) t r ansfer characteristics t a =100 t a =25 i d =250ua t hr eshold voltage t hresho ld voltage v th (v) junction tem perature t j ( ) t y pical characteristics n -channel mos www.cj-elec.com 3 a-5,mar,2016
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -0.01 -0.1 -1 -0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -50 -100 -150 -200 -250 -300 -350 -400 1 2 3 4 5 6 7 8 9 10 -0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 0 2 4 6 8 10 12 14 16 18 20 -0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 25 50 75 100 125 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2 t a =100 v sd i s ?? t a =25 source current i s (a) source to drain voltage v sd (v) v gs =-10v v gs =-6v v gs =-4.5v v gs =-4v v gs =-3v output characteristics v gs =-2.5v drain current i d (a) drain to source voltage v ds (v) v gs =-10v v gs =-5v t a =25 pulsed on-resistance r ds(on) ( ? ) drain current i d (ma) i d ?? r ds(on) t a =100 i d =-0.1a t a =25 on-resistance r ds(on) ( ? ) gate to source voltage v gs (v) v gs ?? r ds(on) v ds =-10v drain current i d (a) gate to source voltage v gs (v) transfer characteristics t a =100 t a =25 i d =-250ua threshold voltage threshold voltage v th (v) junction temperature t j ( ) typical characteristics www.cj-elec.com 4 a-5,mar,2016 p -channel mos
min max min max a 0.900 1.100 0.035 0.043 a1 0.000 0.100 0.000 0.004 a2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c0 . 0.150 0.00 0.006 d 2.000 2.200 0.079 0.087 e 1.150 1.350 0.045 0.053 e1 2.150 2.4 0.085 0.09 e e1 1.200 1.400 0.047 0.055 l l1 0.260 0.460 0.010 0.018 0 8 0 8 0.525 ref 0.021 ref symbol dimensions in millimeters dimensions in inches 0.650 typ 0.026 typ
5a-5,mar,2016
6 a- 5 ,mar,2016 sot-363 tape and reel 1000 500 2000 1500 2500 3000 g h w1 w2 d1 i d reel reel size box box size(mm) carton carton size(mm) g.w.(kg) 3000 pcs 7 inch 30,000 pcs 203 203195 120,000 pcs 438 438220 sot-363 embossed carrier tape sot-363 tape leader and trailer sot-363 reel pkg type sot-363 dimensions are in millimeter a b c d e f p0 p p1 w 2.25 2.55 1.20 ?1.50 1.75 3.50 4.00 4.00 2.00 8.00 d2 packaging description: sot-363 parts are shipped in tape. the carrier tape is made from a dissipative (carbon filled) polycarbonate resin. the cover tape is a multilayer film (heat activated adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. these reeled parts in standard option are shipped with 3,000 units per 7" or 17.8cm diameter reel. the reels are clear in color and is made of polystyrene plastic (anti-static coated). trailer tape leader tape 502 empty pockets 1002 empty pockets components reel option 7''dia dimensions are in millimeter d d1 d2 g h i w1 w2 ?178.00 54.40 13.00 r78.00 r25.60 r6.50 9.50 12.30 b c w f e p1 p0 p a a a a-a d
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